PN Junction Semiconductor Hangzhou Co. specializes in the development and production of advanced silicon carbide (SiC) and gallium nitride (GaN) power devices, primarily serving the automotive industry. The company offers a wide range of SiC MOSFETs and Schottky Barrier Diodes (SBDs) with various voltage ratings and current carrying capabilities, all of which have passed AEC Q101 certification. Operating in the power semiconductor market, which is projected to reach $35 billion annually by 2022, PN Junction Semiconductor leverages its extensive intellectual property portfolio, including 80 patents with 40 already authorized. The company’s business model focuses on manufacturing and selling high-performance power devices that meet the stringent requirements of automotive applications. Revenue is generated through direct sales to automotive manufacturers and other industries requiring robust power electronics solutions. PN Junction Semiconductor also provides a platform for engineers to discuss and exchange knowledge on the latest advancements in wide bandgap semiconductor materials, specifically SiC and GaN.

Keywords: silicon carbide, gallium nitride, power devices, automotive-grade, SiC MOSFETs, Schottky Barrier Diodes, AEC Q101, intellectual property, power electronics, semiconductor market.